Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

@article{Kondo2006ThickStrainedSiRelaxedSiGeSO,
  title={Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets},
  author={M. Kondo and N. Sugii and Y. Hoshino and W. Hirasawa and Y. Kimura and M. Miyamoto and T. Fujioka and S. Kamohara and Y. Kondo and S. Kimura and I. Yoshida},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={3136-3145}
}
  • M. Kondo, N. Sugii, +8 authors I. Yoshida
  • Published 2006
  • Materials Science
  • IEEE Transactions on Electron Devices
    • A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si0.85Ge0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal… CONTINUE READING
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