Thermomechanical reliability of through-silicon vias in 3D interconnects

@article{Lu2011ThermomechanicalRO,
  title={Thermomechanical reliability of through-silicon vias in 3D interconnects},
  author={Kuan-Hsun Lu and Suk-Kyu Ryu and Jay Im and Rui Huang and Paul S. Ho},
  journal={2011 International Reliability Physics Symposium},
  year={2011},
  pages={3D.1.1-3D.1.7}
}
This paper investigates two key aspects of thermomechanical reliability of through-silicon vias (TSV) in 3D interconnects. One is the piezoresistivity effect induced by the near surface stresses on the charge mobility for p- and n- channel MOSFET devices. The other problem concerns the interfacial delamination induced by thermal stresses including the pop-up mechanism of TSV with a ‘nail head’. We first analyze the three-dimensional distribution of the thermal stresses near the TSV and the… CONTINUE READING
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