Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d 5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport

@article{Neophytou2011ThermoelectricPO,
  title={Thermoelectric Properties of Scaled Silicon Nanowires 
Using the sp3d 5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport},
  author={N. Neophytou and H. Kosina},
  journal={Journal of Electronic Materials},
  year={2011},
  volume={40},
  pages={753-758}
}
  • N. Neophytou, H. Kosina
  • Published 2011
  • Materials Science, Physics
  • Journal of Electronic Materials
  • As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared with the raw materials’ ZT values. It has also been suggested that low dimensionality can improve a device’s power factor as well, offering a further enhancement. In this work the atomistic sp3d5s*-spin–orbit-coupled tight-binding model is used to calculate the electronic structure of silicon nanowires (NWs). Linearized Boltzmann… CONTINUE READING
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