Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

@article{Yu2004ThermallyRH,
  title={Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications},
  author={Hongyu Yu and Ming-Fu Li and Dim-Lee Kwong},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={609-615}
}
A systematic study of thermally robust HfN metal gate on conventional SiO/sub 2/ and HfO/sub 2/ high-/spl kappa/ dielectrics for advanced CMOS applications is presented. Both HfN-SiO/sub 2/ and HfN-HfO/sub 2/ gate stacks demonstrates robust resistance against high-temperature rapid thermal annealing (RTA) treatments (up to 1000/spl deg/C), in terms of thermal stability of equivalent oxide thickness (EOT), work function, and leakage current. This excellent property is attributed to the superior… CONTINUE READING
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