Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

@article{Liu2015ThermallySE,
  title={Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier},
  author={Cheng Qiang Liu and Shu Yang and Shenghou Liu and Zhikai Tang and Hanxing Wang and Qimeng Jiang and Kevin J. Chen},
  journal={IEEE Electron Device Letters},
  year={2015},
  volume={36},
  pages={318-320}
}
Al2O3/AlGaN/GaN enhancement-mode metalisolator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a partially recessed (Al) GaN barrier was realized by a fluorine plasma implantation/etch technique. By properly adjusting the RF power driving the fluorine plasma, the fluorine plasma is able to produce two desirable results: 1) a well… CONTINUE READING