Thermal stability of high-k Si-rich HfO(2) layers grown by RF magnetron sputtering.

@article{Khomenkova2010ThermalSO,
  title={Thermal stability of high-k Si-rich HfO(2) layers grown by RF magnetron sputtering.},
  author={L. Khomenkova and X. Portier and J Cardin and Fabrice Gourbilleau},
  journal={Nanotechnology},
  year={2010},
  volume={21 28},
  pages={285707}
}
The microstructure and optical properties of HfSiO films fabricated by RF magnetron sputtering were studied by means of x-ray diffraction, transmission electron microscopy, spectroscopic ellipsometry and attenuated total reflection infrared spectroscopy versus annealing treatment. It was shown that silicon incorporation in the HfO(2) matrix plays an important role in the structure stability of the layers. Thus, the increase of the annealing temperature up to 1000 degrees C did not lead to the… CONTINUE READING