Thermal stability investigation in highly- uniform and low-voltage tantalum oxide-based RRAM

@article{Zhuo2014ThermalSI,
  title={Thermal stability investigation in highly- uniform and low-voltage tantalum oxide-based RRAM},
  author={V. Y.-Q Zhuo and Yu Jiang and John Robertson},
  journal={2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)},
  year={2014},
  pages={1-4}
}
Resistive switching behavior of TaO<sub>x</sub>-based resistive switching devices is investigated at temperatures of 25°C to 300°C. Both the set and reset voltages decrease with increasing temperature. Long retention (>10 years at 150°C) and good thermal stability were achieved for the TaO<sub>x</sub>-based RRAM. At elevated temperatures from 240°C to 300°C… CONTINUE READING