Thermal modeling of zone-melting-recrystallization processing of silicon-on-insulator film structures

@article{Miaoulis1991ThermalMO,
  title={Thermal modeling of zone-melting-recrystallization processing of silicon-on-insulator film structures},
  author={Ioannis N. Miaoulis and Peter Y. Wong and Jos Lipman and J. S. Im},
  journal={Journal of Applied Physics},
  year={1991},
  volume={69},
  pages={7273-7282}
}
A numerical simulation model that considers changes in thermal and radiation properties during zone‐melting‐recrystallization processing of silicon‐on‐insulator film structures with a graphite strip heater was developed. A series of numerical experiments were conducted to investigate the conductive, convective, and radiative parameters affecting the process. The variability of the thermal conductivity of silicon as a function of temperature at the premelting stage and the variation in thermal… 
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