Thermal generation currents in hydrogenated amorphous silicon p - i - n structures

@inproceedings{Street1990ThermalGC,
  title={Thermal generation currents in hydrogenated amorphous silicon p - i - n structures},
  author={Robert A. Street},
  year={1990}
}
Dark conductivity in amorphous silicon p‐i‐n devices arising from thermal generation through bulk defect states is explored. The current decays slowly after a voltage is applied, due to depletion of charge from the undoped layer, and is voltage dependent due to a field‐enhanced generation rate. Creation of metastable bulk defects by light soaking reversibly increases the current. The steady‐state generation current is dervied from the measured relaxation time and depletion charge.Dark… CONTINUE READING

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