Thermal conductivity of heavily doped LPCVD polysilicon

  title={Thermal conductivity of heavily doped LPCVD polysilicon},
  author={Y. C. Tai and C J Mastrangelo and R. S. Muller},
  journal={1987 International Electron Devices Meeting},
We report the first experimental values for the thermal conductivity κσof polycrystalline silicon, an important design parameter for polysilicon micromechanics applied to sensors [1,2]. Because conventional methods to measure κσ[3] are inappropriate for thin-film materials, we introduce a new technique that makes use of an inhomogeneously doped polysilicon microbridge. A bias is applied across the bridge and current-voltage characteristics are measured when the bridge is in vacuum and again… CONTINUE READING
4 Citations
2 References
Similar Papers


Publications referenced by this paper.
Showing 1-2 of 2 references

Kamins,, Device Electronics for Integrated Circuits, Second Edition

  • T.I.R.S. Muller
  • 1986

Thermal Conductiviry, 1, Metallic Elements and Alloys, IFWlenum

  • Y. S. Toulokian, R. W. Powell, C. Y. Ho, P. G. Klemens
  • New York,
  • 1970

Similar Papers

Loading similar papers…