Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

@article{Iwai2005ThermalAS,
  title={Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers},
  author={Taisuke Iwai and Hideo Shioya and Daiyu Kondo and Shinichi Hirose and Akio Kawabata and Shintaro Sato and Mizuhisa Nihei and Toshihide Kikkawa and Kazukiyo Joshin and Yuji Awano and Naoki Yokoyama},
  journal={IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.},
  year={2005},
  pages={257-260}
}
Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 mum long CNT bumps exhibit thermal conductivity of 1400 W/m-K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at, a frequency of 2.1 GHz without any degradation due to heat-up. To our knowledge, this is the first report about, a practical application… CONTINUE READING
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