Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

@inproceedings{Park2008ThermalAP,
  title={Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode},
  author={S. Joon Park and Woo Hee Kim and Han Bo Ram Lee and Woong Jaeg Maeng and Heoung Woo Kim},
  year={2008}
}
Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O"2 and ammonia (NH"3) plasma, respectively. RuCp"2 and Ru(EtCp)"2 were used as Ru precursors. Pure and low resistivity (<[email protected]@Wcm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaN"x, Si, and SiO"2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of… CONTINUE READING

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