Thermal and nonthermal melting of silicon under femtosecond x-ray irradiation

  title={Thermal and nonthermal melting of silicon under femtosecond x-ray irradiation},
  author={Nikita Medvedev and Zheng Li and Beata Ziaja},
  journal={Physical Review B},
As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called ’nonthermal melting’ if the density of electrons excited from the valence to the conduction band overcomes a certain critical value. Such ultrafast transition is induced by strong changes in the atomic potential energy surface, which trigger atomic relocation. However, heating of a material due to the electron-phonon coupling can also lead to a phase transition, called ’thermal… 

Thermal and nonthermal melting of silicon exposed to femtosecond pulses of x-ray irradiation

Silicon irradiated with an ultrashort laser pulse can experience two competing damage processes: the ultrafast ’nonthermal melting’ or the picoseconds ‘thermal melting’. The first one occurs if the

Various damage mechanisms in carbon and silicon materials under femtosecond X-ray irradiation

We review the results of our research on damage mechanisms in materials irradiated with femtosecond free-electron-laser (FEL) pulses. They were obtained using our hybrid approach, X-ray-induced

Hot phonon and carrier relaxation in Si(100) determined by transient extreme ultraviolet spectroscopy

The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers

Femtosecond phase-transition in hard x-ray excited bismuth

This first-time observation of a hard x-ray induced ultrafast phase transition in a bismuth single crystal at high intensities indicates a nonthermal origin of a lattice disordering process, and excludes interpretations based on electron-ion equilibration process, or on thermodynamic heating process leading to plasma formation.

Damage threshold in pre-heated materials exposed to intense X-rays

Materials exposed to ultrashort intense x-ray irradiation may experience various damaging conditions depending on the in-situ temperature. A pre-heated target exposed to intense x-rays plays a

Transient Changes of Optical Properties in Semiconductors in Response to Femtosecond Laser Pulses

In this paper we present an overview of our theoretical simulations on the interaction of ultrafast laser pulses with matter. Our dedicated simulation tool, X-ray induced Thermal And Non-thermal

Contribution of electronic excitation to the structural evolution of ultrafast laser-irradiated tungsten nanofilms

The redistribution of the electron density in a material during laser irradiation can have a significant impact on its structural dynamics. This electronic excitation can be incorporated into two

Applying Tersoff-potential and bond-softening models in a molecular dynamics study of femtosecond laser processing

In the molecular dynamics study of short-pulsed laser processing of semiconductors, potential models capable of describing the atomistic behavior during high electronic excitations is the most

Ultrafast nonthermal heating of water initiated by an X-ray Free-Electron Laser

The bright ultrafast pulses of X-ray Free-Electron Lasers allow investigation into the structure of matter under extreme conditions, and single pulses to ionize and probe water as it undergoes a phase transition from liquid to plasma.



Non-Born-Oppenheimer dynamics of the photoionized Zundel cation: a quantum wavepacket and surface-hopping study.

The ultrafast fragmentation of the Zundel cation H(+)(H2O)2 after photoionization is studied by quantum-dynamics with the multiconfiguration time-dependent Hartree method and with surface-hopping

Surface hopping dynamics using a locally diabatic formalism: charge transfer in the ethylene dimer cation and excited state dynamics in the 2-pyridone dimer.

In this work, the advantages of a locally diabatic propagation of the electronic wave function in surface hopping dynamics proceeding on adiabatic surfaces are presented providing very stable results

Theory for the instability of the diamond structure of Si, Ge, and C induced by a dense electron-hole plasma.

Les phonons acoustiques transverses de Si deviennent mous si environ 9% des electrons sont excites depuis la bande de valence jusqu'a the bande of conduction, la symetrie cubique du reseau du diamant est detruite en moins de 100 fs apres la creation du plasma electron-trou.

The Journal of Physical Chemistry

THE recent development of physical chemistry may be said to date from the year 1887. The fundamental ideas on which the modern superstructure rests had been conceived and even published before that

EPDL97: the evaluated photo data library `97 version

The Evaluated Photon Data Library, 1997 version (EPLD97), is designed for use in photon transport calculations at Lawrence Livermore National Laboratory. This library includes photon interaction data

The Art of Molecular Dynamics Simulation

From the Publisher: This book describes the extremely powerful technique of molecular dynamics simulation, which involves solving the classical many-body problem in contexts relevant to the study of

International Journal of Heat and Mass Transfer


  • Phenom. 188, 172
  • 2013

New J

  • Phys. 15, 015016
  • 2013


Data is reported here to show that a purified particulate preparation from heart muscle which contains all the components of the cytochrome electron transmitter system also contains transhydrogenase, and no reaction whatsoever occurs with TPNH, whether added as such or generated by the glucose-6-phosphate dehydrogenase system.