Thermal and Sensitivity Analysis of Multi-fin Devices

@inproceedings{Swahn2006ThermalAS,
  title={Thermal and Sensitivity Analysis of Multi-fin Devices},
  author={Brian Swahn and Soha Hassoun},
  year={2006}
}
As device dimensions shrink into the nanometer range, power and performance constraints prohibit the longevity of traditi onal MOS devices in circuit design. A finFET, a quasi-planar double-g ated device, has emerged as a replacement. FinFETs are formed by creating a siliconfin which protrudes out of the wafer, wrapping a gate around the fin, and then doping the ends of the fin to form th e source and drain. Wider finFETs are formed using multiple fins between the source and drain regions… CONTINUE READING

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