Thermal Ta/sub 2/O/sub 5/ - alternative to SiO/sub 2/ for high density dynamic memories

@article{Atanassova2002ThermalT2,
  title={Thermal Ta/sub 2/O/sub 5/ - alternative to SiO/sub 2/ for high density dynamic memories},
  author={Elena Atanassova and D. Spassov},
  journal={2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)},
  year={2002},
  volume={2},
  pages={709-712 vol.2}
}
Tantalum pentoxide thin layers (10-100 nm) obtained by thermal oxidation of rf sputtered Ta films on Si have been investigated with respect to their dielectric, structural and electrical properties. It is established that stoichiometric Ta/sub 2/O/sub 5/ detected at the surface of the layers is reduced to tantalum suboxides in their depth. The oxide parameters are discussed in terms of a presence of an unavoidable ultrathin SiO/sub 2/ between Si and Ta/sub 2/O/sub 5/ and bond defects in both… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-8 OF 8 REFERENCES

Thin Ta 2 O 5 layers on Si as an alternative to SiO 2 for high density DRAM application ”

T. Dimitrova E. Atanassova
  • Handbook of surfaces and interfaces of materials
  • 1999

X - ray photoelectron spectroscopy of thermal thin Ta 2 O 5 films on Si ” , Applied Surface

D. Spassov Atanassova
  • Thin RF sputtered and thermal Ta 2 O 5 on Si for high density DRAM application ” , Microelectronics and Reliability
  • 1998