Thermal Stability of MOCVD and HVPE GaN Layers in H 2 , HCl , NH 3 and N 2


This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were found to obey a dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gases to form condensed Ga in addition to the… (More)

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