Thermal Sensor Using Poly-Si Thin-Film Transistor With Widened Detectable Temperature Range

Abstract

We propose a thermal sensor using a poly-Si thin-film transistor (TFT) with widened detectable temperature range. The cell circuit is composed of one transistor and one capacitor. The cell capacitor is charged during initializing periods and discharged during holding periods, and the dropped voltages are measured during detecting periods. The temperature is… (More)

4 Figures and Tables

Topics

  • Presentations referencing similar topics