Thermal Characterization of Power Semiconductors with H-Bridge Testing Circuit

@article{Zhu2018ThermalCO,
  title={Thermal Characterization of Power Semiconductors with H-Bridge Testing Circuit},
  author={Ye Zhu and Ke Ma},
  journal={2018 IEEE Energy Conversion Congress and Exposition (ECCE)},
  year={2018},
  pages={5068-5073}
}
Thermal characterization of power semiconductors is becoming crucial for reliability and cost-efficient design of converter. However, the widely used methods which were developed decades ago, have limits in extracting thermal characteristics, especially when considering the dynamic working conditions of the power devices and the emerging needs for the reliability analysis. In this paper, a novel testing method and circuit based on H-bridge topology is proposed. Four sets of IGBTs and… CONTINUE READING

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Thermal Characterization Method of Power Semiconductors Based on H-Bridge Testing Circuit

  • IEEE Transactions on Power Electronics
  • 2019
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