Theory of a new three-terminal microwave power amplifier

  title={Theory of a new three-terminal microwave power amplifier},
  author={Se Puan Yu and Wirojana Tantraporn and J. R. Eshbach},
  journal={IEEE Transactions on Electron Devices},
The feasibility of a new three-terminal linear power amplifier has been demonstrated both theoretically and experimentally from 0.5 to 3.0 GHz. The new amplifier is similar to an n-p-n bipolar transistor in configuration but develops extra power gain through avalanche multiplication and by the use of transit time in the collector. Major differences in the construction of the two devices are in their collector doping profiles and depletion layer widths. It is estimated that this new amplifier… 
12 Citations

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New results in the 3-5 GHz region, obtained on CATT cells designed for improved efficiency as microwave power amplifiers, are reported. At 3.0 GHz collector efficiencies of 39% have been measured

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This paper presents a study of the behaviour and capabilities of avalanching microwave transistor amplifiers through measurements carried out on transistors in small signal conditions and with

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The operation of an Auger transistor is investigated, using a coupled analysis based on thermionic-emission and drift-diffusion theory. Characteristics for steady-state and small-signal operation are

The Auger transistor

  • S. TiwariW. I. WangJ. East
  • Physics
    Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,
  • 1989
The authors describe the properties of a heterostructure bipolar transistor (HBT) that uses Auger generation to improve the high-frequency performance. An analytic model has been used to predict the

A controlled-avalanche superlattice transistor

A novel bipolar avalanche transistor is proposed. Controlled avalanche and large current output over a significant bias region is achieved by incorporating a staircase multiplication region at the




Abstract : This report discusses research on the tunnelemission amplifier and its relation to thin-film circuits. The two major areas of technical effort were the evaluation of various materials with

Alloyed junction avalanche transistors

A new device, the avalanche transistor, is described. Its properties derive from the utilization of the multiplication inherent in the breakdown process of reverse-biased semiconductor junctions.

A computer simulation scheme for various solid-state devices

The main computational scheme for the determination of the device-circuit interaction and the internal dynamics of the solid-state device are described. Certain important details are separately

Efficiencies of Schottky-barrier GaAs and both complementary structures of Si IMPATT diodes

Computer simulation results show that optimum dc to RF conversion efficiency is in descending order for Schottky-barrier GaAs, p+-n Si, and n+-p Si IMPATT diodes.

The Regeneration Theory

  • H. Nyquist
  • Education
    Journal of Fluids Engineering
  • 1954
The following is an explanation of the circumstances which led the author to write his 1932 paper on the “Regeneration Theory.”