Theory of a Wide-Gap Emitter for Transistors

@article{Kroemer1957TheoryOA,
  title={Theory of a Wide-Gap Emitter for Transistors},
  author={H. Kroemer},
  journal={Proceedings of the IRE},
  year={1957},
  volume={45},
  pages={1535-1537}
}
  • H. Kroemer
  • Published 1957
  • Materials Science
  • Proceedings of the IRE
In order to obtain a high current amplification factor, it is important in transistors that the ratio of the injected minority carrier current over the total emitter current, γ, be close to unity, or that the quantity 1-γ, called the injection deficit, be as small as possible. It is shown that the injection deficit of an emitter can be decreased by several orders of magnitude if the emitter has a higher band gap than the base region. This effect can be utilized either in addition to the… Expand
424 Citations

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