Theory and design of field-effect carbon nanotube transistors

@article{Pennington2003TheoryAD,
  title={Theory and design of field-effect carbon nanotube transistors},
  author={G.. Pennington and N.. Goldsman},
  journal={International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.},
  year={2003},
  pages={167-170}
}
In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by… CONTINUE READING

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-5 of 5 references

Monte Carlo Study of Electron Transport in a Carbon Nanotube,

  • G. Pennington, N. Goldsman
  • IEICE TRANS. Electron.,
  • 2003
1 Excerpt

Physical properties of carbon nanotubes

  • R. Saito, M. S Dresselhaus, G. Dresselhaus
  • Imperial College Press, London
  • 1998
1 Excerpt

Similar Papers

Loading similar papers…