Theoretical study of polarization-doped GaN-based light-emitting diodes

@inproceedings{Zhang2011TheoreticalSO,
  title={Theoretical study of polarization-doped GaN-based light-emitting diodes},
  author={Lepeng Zhang and Kai Ding and Ningtao Liu and Tiaoxing Wei and Xiaoli Ji and Peng Fang Ma and Jian-min Yan and J. X. Wang and Yong Zeng and Jingyang Li},
  year={2011}
}
Insufficient hole injection is a major impediment to the luminescence efficiency of III-nitride light-emitting diodes (LEDs). In our previous work by Zhang et al. [Appl. Phys. Lett. 97, 062103 (2010)], high-density mobile three-dimensional hole gas is obtained in Mg-doped Al composition graded AlGaN layer with Al composition linearly decreasing from a certain value to 0. In this paper, it is revealed by a theoretical study that the hole injection efficiency in blue-light GaN-based LEDs can be… CONTINUE READING