Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model

  title={Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model},
  author={Yuta Yahagi and Daisuke Miura and Akimasa Sakuma},
  journal={Journal of the Physical Society of Japan},
In this study, we present a theoretical interpretation of the experimental results that the anisotropic magnetoresistance (AMR) effect has a four-fold symmetric component, $c_4$, in cubic ferromagnetic metals. The theoretical model that we employ is based on the Anderson impurity model that includes a four-fold symmetric crystalline electric field, and we assume that the impurities have 3d electron orbitals and spin--orbit interaction (SOI). We describe the DC conductivity on the basis of the… 

Figures and Tables from this paper


Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe$_4$N, and Half-Metallic Ferromagnet: A Systematic Analysis
We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe$_4$N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the
Anomalous Anisotropic Magnetoresistance in Pseudo-Single-Crystal γ'-Fe4N Films
The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal γ'-Fe4N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction
Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films
In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold
Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect
We present the anisotropic magnetoresistance (AMR) properties in Fe4N, Co3FeN and Co4N epitaxial thin films grown on SrTiO3(001) substrates using molecular beam epitaxy. A negative AMR effect was
Magnetoresistance of a Permalloy Single Crystal and Effect of 3 d Orbital Degeneracies
The electrical resistance of single crystals of the alloy 15% Fe-85% Ni has been measured at 20, 77, and 299\ifmmode^\circ\else\textdegree\fi{}K, in a transverse or longitudinal magnetic field
Annealing effects on nitrogen site ordering and anisotropic magnetoresistance in pseudo-single-crystal γ′-Fe4N films
Pseudo-single-crystal γ′-Fe4N films were fabricated by changing the degree of order (S) of N sites, and their anisotropic magnetoresistance (AMR) effects along the Fe4N[100] direction were
Negative Anisotropic Magnetoresistance in γ'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy
We observed the negative anisotropic magnetoresistance (AMR) effect in γ'-Fe4N epitaxial films grown on SrTiO3(001) substrates using molecular beam epitaxy. The AMR ratio was increased immediately
Anisotropic Magnetoresistance in Ferromagnetic 3 d Alloys ”
Two magnetic layers are mutually interconnected by a constricted region also made of a magnetic material. The layerS may be separated by an intermediate non-metallic layer having a hole filed with
Spontaneous anisotropy of the electrical resistivity of Ni
The spontaneous resistivity anisotropy of bulk cylindrical single crystals of Ni, NiPt 0.55 (0.55 at% Pt), NiFe 0.5 and NiPd 4.0 is measured at several points in the temperature range
Statistical-Mechanical Theory of Irreversible Processes : I. General Theory and Simple Applications to Magnetic and Conduction Problems
A general type of fluctuation-dissipation theorem is discussed to show that the physical quantities such as complex susceptibility of magnetic or electric polarization and complex conductivity for