Theoretical Screening of Candidate Materials for DRAM Capacitors and Experimental Demonstration of a Cubic-Hafnia MIM Capacitor

Abstract

To screen candidate materials for dynamic random-access memory capacitors, the tunneling probability at a constant equivalent oxide thickness (EOT) of metal-insulator-metal (MIM) capacitors was theoretically maximized according to a tradeoff between permittivity and band offset. As a result, it was found that cubic HfO2 with a TiN electrode is a promising… (More)

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