Theoretical Scanning Tunneling Microscopy Images of the As Vacancy on the GaAs(110) Surface.

Abstract

The atomic and electronic structure of an As vacancy on the GaAs(110) surface is examined using ab initio pseudopotentials. The relaxed atomic structure reveals an inward movement of the neighboring surface Ga atoms which is in disagreement with recent interpretations of the scanning tunneling microscopy (STM) images for this system. However, a careful… (More)

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