Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films

@inproceedings{Li2007TheoreticalAO,
  title={Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films},
  author={Kunhang Li and Xia Xiao and Yu Feng Jin},
  year={2007}
}
Porous silicon dioxide films featuring low dielectric constant are of great scientific and commercial interest because of their outstanding potential for application to microelectronic interconnect. However, some reliability problems arise in porous SiO2 films due to their poor mechanical performance. Therefore, it is very important to understand the mechanical and electrical properties of porous SiO2 films. New 2-D models with circle pores and 3-D models with cubic pores are proposed in this… CONTINUE READING