The valley Hall effect in MoS2 transistors

@article{Mak2014TheVH,
  title={The valley Hall effect in MoS2 transistors},
  author={Kin Fai Mak and Kathryn Mcgill and Jisoo Park and Paul L. McEuen},
  journal={Science},
  year={2014},
  volume={344},
  pages={1489-1492}
}
Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall… CONTINUE READING
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