The use of novel PtSi thin film structures in preferential sputtering measurements

@inproceedings{Liau1978TheUO,
  title={The use of novel PtSi thin film structures in preferential sputtering measurements},
  author={Z. L. Liau and Catherine Jean Doherty and C. M. Melliar‐Smith and John M. Poate},
  year={1978}
}
Abstract The yields of silicon and platinum from the argon sputtering of PtSi films were measured by Rutherford backscattering techniques. Novel thin film structures of Al 2 O 3 (substrate)/W/PtSi were employed to facilitate the measurements. Before steady state was reached, more silicon than platinum was sputtered off, in good agreement with platinum enrichment measurements in the sputtered samples. At steady state the silicon and platinum sputtering yields were equal.