The threshold voltage fluctuation of one memory cell for the scaling-down NOR flash

@article{An2010TheTV,
  title={The threshold voltage fluctuation of one memory cell for the scaling-down NOR flash},
  author={Hojoong An and Kyeongrok Kim and Sora Jung and Hyungjun Yang and Kyubeom Kim and Yunheub Song},
  journal={2010 2nd IEEE InternationalConference on Network Infrastructure and Digital Content},
  year={2010},
  pages={433-436}
}
The threshold voltage (Vth) fluctuation for the NOR flash memory scaling is investigated. The Vth fluctuations for one memory cell in 45nm node are dramatically increased to 350% compared to 90nm generation due to the reduction of channel area and the increase of channel doping level. Here, as the cell size is scaled, the impact due to random telegraph noise (RTN), Dopant Fluctuation and etc become more critical. In 45nm technology, the RTN results in the Vth fluctuations of 60% from the… CONTINUE READING

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