The strength and oxidation of reaction-sintered silicon nitride

@article{Evans1970TheSA,
  title={The strength and oxidation of reaction-sintered silicon nitride},
  author={Anthony. G. Evans and Roger William Davidge},
  journal={Journal of Materials Science},
  year={1970},
  volume={5},
  pages={314-325}
}
The structure of reaction-sintered silicon nitride is studied using scanning electron and optical microscopy at various stages during nitriding, for a range of nitriding and compacting conditions. The strength is then evaluated and interpreted in terms of the microstructure. It is found that fracture always occurs in a brittle manner by the extension of the largest pores. The effects of prolonged annealing in air above 1000† C on both the structure and strength are investigated. At 1400† C… Expand
Reaction sintered silicon nitride
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The “passive” oxidation behaviour of silicon nitride hot-pressed with 1 wt% MgO has been studied in dry oxygen in the temperature range 1000 to 1400‡ C. The oxidation follows the classical parabolicExpand
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Conclusions1.Oxidation of materials of the type NKKKM-79 commences at 800°C and it proceeds in accordance with reactions (1) and (2). Silicon dioxide forming in this way in the temperature rangeExpand
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Nitridation of silicon under high pressure
The microstructure of reaction-bonded Si{sub 3}N{sub 4} was changed by nitriding Si powder compacts at 0, 1, and 50 MPa. The microstructural parameters were analyzed using light and scanning electronExpand
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