The silicon p-n-p-n switch and controlled rectifier (thyristor)

@article{Holonyak2001TheSP,
  title={The silicon p-n-p-n switch and controlled rectifier (thyristor)},
  author={Jr. Nick Holonyak},
  journal={IEEE Transactions on Power Electronics},
  year={2001},
  volume={16},
  pages={8-16}
}
  • J. Holonyak
  • Published 2001
  • Engineering
  • IEEE Transactions on Power Electronics
Based on the two-transistor model of Jim Ebers (a p-n-p transistor driving an n-p-n, and the n-p-n driving the p-n-p), the two-terminal and three-terminal Si p-n-p-n switch (low power) originated at Bell Telephone Laboratories (BTL) in 1954-1955. The two-terminal version, with its various limitations (along with tile Si technology supplied by BTL, Moll's group), went with Shockley to the West Coast. The two-terminal device and the Shockley enterprise failed, except as an unplanned, unpredicted… 
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