The semiconductor junction igniter: a novel RF and ESD insensitive electro-explosive device

@inproceedings{Baginski1993TheSJ,
  title={The semiconductor junction igniter: a novel RF and ESD insensitive electro-explosive device},
  author={Thomas A. Baginski and A. S. Hodel},
  year={1993}
}
The description and characterization of a monolithic, solid-state electroexplosive device are presented. The structure is inherently immune to radio frequency (RF) radiation and also offers protection from electrostatic discharge (ESD). Interconnection to the device can be accomplished by a variety of techniques, such as soldering, epoxy, etc. Standard microelectronic techniques were utilized for fabrication. The devices can be manufactured very economically and in large quantities. > 

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