The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence.

@article{Yin2015TheRO,
  title={The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence.},
  author={Xue-Bing Yin and Zheng-Hua Tan and Xin Guo},
  journal={Physical chemistry chemical physics : PCCP},
  year={2015},
  volume={17 1},
  pages={
          134-7
        }
}
Single crystalline SrTiO3 doped with 0.1 wt% Nb was used as a model system to evaluate the role of the Schottky barrier in the resistive switching of perovskites. The Ti bottom electrode formed an ohmic contact in the Ni/Nb:SrTiO3/Ti stack, whereas the Ni top electrode created a strong Schottky barrier, which was reflected in a huge semi-circle in the impedance spectrum of the stack. Bipolar switching was achieved in the voltage range of -4 to 4 V for the stack, two clear resistance states were… 
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