The rate of charge tunneling is insensitive to polar terminal groups in self-assembled monolayers in Ag(TS)S(CH2)(n)M(CH2)(m)T//Ga2O3/EGaIn junctions.

Abstract

This paper describes a physical-organic study of the effect of uncharged, polar, functional groups on the rate of charge transport by tunneling across self-assembled monolayer (SAM)-based large-area junctions of the form Ag(TS)S(CH2)(n)M(CH2)(m)T//Ga2O3/EGaIn. Here Ag(TS) is a template-stripped silver substrate, -M- and -T are "middle" and "terminal… (More)
DOI: 10.1021/ja409771u

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@article{Yoon2014TheRO, title={The rate of charge tunneling is insensitive to polar terminal groups in self-assembled monolayers in Ag(TS)S(CH2)(n)M(CH2)(m)T//Ga2O3/EGaIn junctions.}, author={Hyo Jae Yoon and Carleen Morris Bowers and Mostafa Baghbanzadeh and George M. Whitesides}, journal={Journal of the American Chemical Society}, year={2014}, volume={136 1}, pages={16-9} }