The radial layout design concept for the Bi-mode insulated gate transistor

@article{Storasta2011TheRL,
  title={The radial layout design concept for the Bi-mode insulated gate transistor},
  author={Liutauras Storasta and Munaf Rahimo and Marco Bellini and Arnost Kopta and Umamaheswara Vemulapati and N. Kaminski},
  journal={2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs},
  year={2011},
  pages={56-59}
}
In this paper we present a new radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT). The study shows that the arrangement of the n+-stripes plays a key role for the on-state characteristics of the BiGT. With the aid of 3D device simulations the visualization of the plasma distribution during the on… CONTINUE READING