The radial layout design concept for the Bi-mode insulated gate transistor

In this paper we present a new radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT). The study shows that the arrangement of the n+-stripes plays a key role for the on-state characteristics of the BiGT. With the aid of 3D device simulations the visualization of the plasma distribution during the on… CONTINUE READING