The quantitative determination of the residual stress profile in oxidized p+ silicon films

@inproceedings{Yang1996TheQD,
  title={The quantitative determination of the residual stress profile in oxidized p+ silicon films},
  author={Eui-Hyeok Yang and Sangsik Yang},
  year={1996}
}
Abstract This paper presents a quantitative method to determine the profile of the residual stress through the depth of a highly boron-doped silicon film. First, the stress profile relative to the stress at the neutral surface of the film is determined by least-square estimation using the measured vertical deflection of p + silicon cantilevers with different etch depths. Secondly, the average of the residual stress is obtained from the measured deflection of a rotating beam structure. The… CONTINUE READING

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