The p-type conduction mechanism in Cu2O: a first principles study.

@article{Nolan2006ThePC,
  title={The p-type conduction mechanism in Cu2O: a first principles study.},
  author={Michael Nolan and Simon D. Elliott},
  journal={Physical chemistry chemical physics : PCCP},
  year={2006},
  volume={8 45},
  pages={5350-8}
}
Materials based on Cu2O are potential p-type transparent semiconducting oxides. Developing an understanding of the mechanism leading to p-type behaviour is important. An accepted origin is the formation of Cu vacancies. However, the way in which this mechanism leads to p-type properties needs to be investigated. This paper presents a first principles analysis of the origin of p-type semiconducting behaviour in Cu2O with 1.5 and 3% Cu vacancy concentrations. Plane wave density functional theory… CONTINUE READING

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