The oxidation of tantalum-based thin films

  title={The oxidation of tantalum-based thin films},
  author={V. P. Kolonits and M. Czermann and Olga Geszti and Mikl{\'o}s Menyh{\'a}rd},
Abstract Using different techniques (Auger electron spectroscopy, Rutherford back-scattering spectrometry, transmission electron microscopy and electrical measurements) a region of tantalum nitride layer composition was found where the increase in resistance (during thermal oxidation) is caused only by the decrease in thickness of the metallic part of the film. By means of the very sensitive method of the resistance measurements these compositions were shown to be suitable for the study of the… CONTINUE READING