The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

@article{Scalise2020TheOA,
  title={The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach},
  author={Emilio Scalise and Luca Barbisan and Andrey Sarikov and Francesco Montalenti and Leo Miglio and Anna Marzegalli},
  journal={arXiv: Materials Science},
  year={2020}
}
3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties) and the possibility of a direct integration in the Si technology. Here we use a multiscale… 

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