The optical and electronic properties of semiconducting diamond

@article{Collins1993TheOA,
  title={The optical and electronic properties of semiconducting diamond},
  author={Alan T. Collins},
  journal={Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences},
  year={1993},
  volume={342},
  pages={233 - 244}
}
  • A. T. Collins
  • Published 1993
  • Materials Science
  • Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences
In this paper I review the evidence that shows that the optical and electronic properties of semiconducting diamond can be understood in terms of boron acceptors partially compensated by deep donors. In natural semiconducting diamond, in which the total impurity concentration is less than 1 ppm, there is a lot of fine structure in the acceptor absorption spectrum that is not fully understood, and the electrical conductivity is primarily associated with the thermally activated excitation of… 

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References

SHOWING 1-10 OF 37 REFERENCES
The nature of the acceptor centre in semiconducting diamond
A precision study has been made of the temperature dependence of the Hall effect and resistivity in five carefully selected natural semiconducting diamonds. The donor and acceptor concentrations in
Optical Phonon Effects in the Infra-red Spectrum of Acceptor Centres in Semiconducting Diamond
The infra-red absorption spectrum of two natural Type IIb semi-conducting diamonds has been measured by high resolution grating spectroscopy in the range 0.1 to 0.7 eV and at temperatures from 70° to
Impurity conduction in synthetic semiconducting diamond
Electrical conductivity and Hall effect measurements have been made on a series of synthetic p-type semiconducting diamonds in the temperature range 80 to 450K. The dominant conductivity mechanism at
Growth of Device-Quality Homoepitaxial Diamond Thin Films
Diamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40
Determination of boron in natural semiconducting diamond by prompt particle nuclear microanalysis and Schottky barrier differential-capacitance measurements
Capacitance-voltage characteristics have been obtained for Schottky barrier diodes, formed on polished surfaces of natural p-type semiconducting diamond, before and after illumination with radiation
Electrical conduction in undoped diamond films prepared by chemical vapor deposition
Electrical conduction along conducting layers between grains in chemical vapor deposited polycrystalline diamond films has been studied. The dc current‐voltage characteristic consists of an ohmic
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