The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors

In this article, we report the effect of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) based on the simulation with the extracted model parameters from experiment data before irradiation, after irradiation and after annealing. A simplified Vertical Bipolar Inter-Company (VBIC) static model is… CONTINUE READING