The model of IGBT as a power switch

@article{Jing2011TheMO,
  title={The model of IGBT as a power switch},
  author={Tang Jing and Zhao Chang-Hao},
  journal={2011 International Conference on Electronics, Communications and Control (ICECC)},
  year={2011},
  pages={1720-1723}
}
Generally there are two kinds of IGBT model. They are Hefner and model macro model. The Hefner model is made up of a mosfet and a pnp. It is difficult for parameter extraction. The macro model is made up of some capacitors and a current source. However when the IGBT work as a power switch, the IGBT switches between cut-off area and saturated area. Its behavior is not the same as a current source. In fact the IGBT is anti-parallel with a diode. Its measure data such as input capacitance Ciss… CONTINUE READING