The missing memristor found

  title={The missing memristor found},
  author={Dmitri B. Strukov and Greg Snider and Duncan R. Stewart and R. Stanley Williams},
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an… 

Memristor - The fictional circuit element

This report investigates the assertion that the memristor is a fundamental passive circuit element, from the perspective that electrical engineering is the science of charge management, and shows that there can only be three fundamental passive circuits elements.


For past 180 years, circuit theory is studied with three fundamental circuit elements, the resistor, the capacitor and the inductor. The memristor (short for memory resistor) is a yet quite unknown

Memristors: Devices, Models, and Applications

The three basic electrical circuit elements, namely, capacitor, which was invented by Ewald Georg von Kleist in 1745, resistor, which was invented by Georg Simon Ohm in 1827, and inductor, which was

Memristor Technology and Applications:An Overview

The properties and potentials of Memristor are studied, how it works, how is its physical design behavour, and what are the different implementation and fabrication materials of this nano-device.

Memristor in a Nutshell

  • M. Trefzer
  • Engineering
    Guide to Unconventional Computing for Music
  • 2017
This chapter is about the remarkable discovery of the “fourth fundamental passive circuit element”, the memristor, an amalgamation of the words “memory” and “resistor’s properties to act as a resistor with memory, which belongs to the family of passive circuit elements.


Memristor is a new electrical element which has been predicted and described in 1971 by Leon O. Chua and for the first time realized by HP laboratory in 2008. Chua proved that memristor behavior

Special issue on ‘Advances in Memristive Networks’

This Special Issue on ‘Advances in Memristive Networks’ is particularly devoted to present the most recent results as well as key aspects and perspectives of on-going research on relevant topics, all of them involving large networks of memristor devices used in diverse applications.

Feedback systems with memristors

The contribution is concerned on the properties of the new ideal circuit element, a memristor. By definition, a memristor relates the charge q and the magnetic flux ¿ in a circuit, and complements a

Memristor Theory and Mathematical Modelling

Memristor is the newly discovered fourth circuit element. The other familiar three circuit elements are resistor, capacitor and inductor. In 1971, Leon Chua reasoned that there should be a fourth

Memristive switching of single-component metallic nanowires

This work employs electromigration to create a reversible passive electrical switch, a memristive device, from a single-component metallic nanowire, and introduces a new class of memristors, devices in which the state variable of resistance is the system's physical geometry.



Memristor-The missing circuit element

A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-

Memristive devices and systems

A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are

Quantized conductance atomic switch

It is demonstrated that a quantized conductance atomic switch (QCAS) can switch between ‘on’ and ‘off’ states at room temperature and in air at a frequency of 1 MHz and at a small operating voltage (600 mV).

Nanoionics-based resistive switching memories.

A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.

Nonvolatile Memory Elements Based on Organic Materials

Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have

Reproducible switching effect in thin oxide films for memory applications

Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses

Nanoscale memory elements based on solid-state electrolytes

We report on the fabrication and characterization of nanoscale memory elements based on solid electrolytes. When combined with silver, chalcogenide glasses such as Se-rich Ge-Se are good solid

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.

Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films

We report on resistive switching of capacitor-like SrRuO3∕Ba0.7Sr0.3TiO3∕Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By

Organic nonvolatile memory by dopant-configurable polymer

We report an organic, nonvolatile memory based on dopant concentration-induced conductance changes in a conjugated polymer. Consisting of a polymer poly [2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene