The memristive properties of a single VO2 nanowire with switching controlled by self-heating.

@article{Bae2013TheMP,
  title={The memristive properties of a single VO2 nanowire with switching controlled by self-heating.},
  author={Sung-Hwan Bae and Sangmin Lee and Hyun Koo and Long Lin and Bong Hyun Jo and Chan Sam Park and Zhong Lin Wang},
  journal={Advanced materials},
  year={2013},
  volume={25 36},
  pages={5098-103}
}
A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The… CONTINUE READING