The lateral punch-through transistor

@article{Wilamowski1982TheLP,
  title={The lateral punch-through transistor},
  author={B. Wilamowski and R. E. Jaeger},
  journal={IEEE Electron Device Letters},
  year={1982},
  volume={3},
  pages={277-280}
}
Operation of a diffused-gate, lateral punch through transistor has been demonstrated. Operation is similar to the static induction transistor, and the device can be used in planar integrated circuits. Current flow in this lateral device obeys the space charge limited conduction law over a wide range of currents, and the drain current exhibits a negative temperature coefficient.