The kinetics of degradation of data retention of post-cycled NROM non-volatile memory products

  title={The kinetics of degradation of data retention of post-cycled NROM non-volatile memory products},
  author={Meir Janai and Boaz Eitan},
  journal={2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.},
The kinetics of degradation of the threshold voltage of post-cycled NROM products is investigated. The root cause of the threshold voltage drift is attributed to hole accumulation over the junction edge during cycling. During retention bake, the excess holes migrate laterally in the nitride layer to annihilate electrons trapped over the channel. Comparison of the kinetics of the threshold voltage drift and the transport kinetics of silicon dioxide excludes vertical charge loss through the top… CONTINUE READING


Publications citing this paper.
Showing 1-10 of 13 extracted citations


Publications referenced by this paper.
Showing 1-10 of 15 references

retention reliability model ofNROM nonvolatile m e m o y products

  • M. Janai
  • IEEE Transactions on Device and Ahtwials…
  • 2004

-Evidence for hydrogen-related defects

  • H. Huard. F. Monsieur, G. Ribes, S. Bruyere
  • Prac. of the IEEE International Reliability…
  • 2003

Reliability and electric properties of PECVD a-SiNx:H films with an optical bandgap ranging from 2.5 to 5.38 e V

  • M.H.W.M. van Delden, P. J. van der We
  • Proc. of the IEEE International Reliabilify…
  • 2003

'A new reliability model for postcycling charge retention of flash memories

  • H. P. Belgal, N. Righos, I. Kalastirsky J.J. Peterson, R. Shiner, N. Mielke
  • in Proc. of the IEEE lnternational Reliubility…
  • 2002

Data Retention of a SONOS type Two-bit Storage Flash Memory Cell

  • Zous, C. J. Liu, C. H. Chen, T. Wang, S. Pan, C. Y. Lu
  • in I€RM Tech. Digest
  • 2001

A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell", in lE€E

  • Finzi, NROM
  • Electron Device Lett. vol. 2 I pp. 543545,
  • 2000

Can NROM, a 2-bit trapping storage cell, give a real challenge to floating gate cells?" i n Proc

  • B. Eitan, P. Pavan, I. Bloom, E. Aloni. A. Frommer, D. Finzi
  • 1999

Bendler, "Time scale invariace in transport and r e l a x a h " Physics Today (AIP, Jan

  • Jackson, Phil
  • 1987

Similar Papers

Loading similar papers…