The influence of the input capacitor on the ESD behavior

@article{Wei2011TheIO,
  title={The influence of the input capacitor on the ESD behavior},
  author={Shouming Wei and Qinsong Qian and Weifeng Sun and Jing Zhu and Siyang Liu},
  journal={2011 IEEE International Conference of Electron Devices and Solid-State Circuits},
  year={2011},
  pages={1-2}
}
The Electrostatic discharge (ESD) capabilities of the gate-ground NMOS devices in the circuits with and without input capacitance are experimentally compared in this paper. The experimental results show that the input capacitor can reduce the ESD robustness, which has been explained in detail by using two-dimensional simulator. At last, a novel design is… CONTINUE READING