The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers


This work reports the study concerning the influence of the preparation conditions on the structure of silicon rich oxide (SRO) deposited by PECVD method by which the structural properties of the film are strictly related. In particular we investigated the role of reactant gases N2O and SiH4 on the total Si concentration, Si excess concentration, Si… (More)
DOI: 10.1016/j.microrel.2007.01.056


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