The influence of edge effects on the determination of the doping profile of silicon pad diodes

@article{Hufschmidt2016TheIO,
  title={The influence of edge effects on the determination of the doping profile of silicon pad diodes},
  author={Markus Hufschmidt and Eckhart Fretwurst and Erika Garutti and Robert Klanner and Ioannis Kopsalis and J. Schwandt and B. Tohermes},
  journal={2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)},
  year={2016},
  pages={1-4}
}
  • M. Hufschmidt, E. Fretwurst, B. Tohermes
  • Published 3 May 2016
  • Physics, Materials Science
  • 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)

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